BU4508AF

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High-voltage high-speed switching APPLICATIONS ·Designed for use in horizontal deflection circuits of CTV receivers and p.c monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8A ICM Collector Current-Peak 15 A IB Base Current- Continuous 7A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 45 W 150 ℃ -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 800 7.5 V V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A; IB= 1.25A VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB=6V ; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VC...