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BU4522AF Datasheet

Part Number BU4522AF
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet BU4522AF DatasheetBU4522AF Datasheet (PDF)

INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon NPN Power Transistor BU4522AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage VALUE 1500 800 7.5 10 U.

  BU4522AF   BU4522AF






Part Number BU4522AF
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4522AF DatasheetBU4522AF Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak .

  BU4522AF   BU4522AF







Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon NPN Power Transistor BU4522AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage VALUE 1500 800 7.5 10 UNIT V V Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak w ww s c s .i V A 25 6 9 45 150 -55~150 A A A W ℃ ℃ n c . i m e IBM PC TJ Tstg Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4522AF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 1.03 1.0 2.0 1.0 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE.


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