BU4522DF

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4522DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 7 6 285 t.b.f MAX. 1500 800 10 25 45 3.0 2.2 400 t.b.f UNIT V V A A W V A A V ns ns Ths ≤ 25 ˚C IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz IF = 7.0 A ICsat = 7 A; f = 16 kHz f = 64 kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak ...