BU4525DL

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525DL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 9.0 t.b.f 0.4 t.b.f MAX. 1500 800 14 30 125 3.0 2.2 0.55 t.b.f UNIT V V A A W V V A A µs µs Ths ≤ 25 ˚C IC = 9.0 A; IB = 2.25 A IF = 9.0 A f = 16 kHz f = 70 kHz ICsat = 9.0 A;f = 16 kHz f = 70 kHz PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b Rbe heat collector sink 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak val...