BU47A

www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● ● ● Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%. BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A SYMBOL VCEX VCER VCEO IC ICM IB IBM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 9 15 3 6 120 -65 to +150 -65 to +150 UNIT V V V A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) V(BR)EBO Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter cut-off current IC = 200 mA IE = 50 mA TEST CONDITIONS L = 25 mH IC = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω RBE = 10 ...