BU522

isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 350 V VCER Collector-Emitter Voltage 375 V VCBO Collector-Base Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon Darlington NPN Power Transistor BU522 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCER(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 80mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 80mA ICER Collector Cutoff Current VCR= 350V; RBE= 270Ω ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 5V MIN TYP. MAX UNIT 350 V 2.5 V 2.5 V 1.0 mA 1.0 mA 40 m...