BU603

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power supplies and deflection circuits for color receivers and monitors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE= 0 1350 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A IE Emitter Current-Continuous 7 A IEM Emitter Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W BU603 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU603 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.33A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.33A ICES Collector Cutoff Current VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃ IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE...