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BU608 Datasheet

Part Number BU608
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BU608 DatasheetBU608 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU608 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector .

  BU608   BU608






Part Number BU608
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU608 DatasheetBU608 Datasheet (PDF)

isc Silicon NPN Power Transistor BU608 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VC.

  BU608   BU608







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU608 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 100 200 -65~200 Open emitter Open base Open collector CONDITIONS VALUE 400 200 7 7 2.5 W UNIT V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=400V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V 15 5 MIN 200 400 7 TYP. www.datasheet4u.com BU608 SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V V V 1.0 1.5 10 10 V V .


2009-05-11 : MQ2219    MQ2218A    MQ2219A    BU505    BU505DF    BU506    BU506D    BU506DF    BU508    BU508A   


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