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BU902 Datasheet

Part Number BU902
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BU902 DatasheetBU902 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU902 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For color TV horizontal deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter.

  BU902   BU902






Part Number BU902
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU902 DatasheetBU902 Datasheet (PDF)

isc Silicon NPN Power Transistor BU902 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage RBE≈100Ω 1100 V VCES Collector-Emitter Voltage 1100 V VCEO Collector-Emitter Voltage .

  BU902   BU902







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU902 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For color TV horizontal deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature tp<5ms TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1100 480 7 8 15 100 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU902 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0; IE=10mA; IC=0; IC=4A;IB=0.8A IC=4A;IB=0.8A VCB=1100V;IE=0 VEB=5V;IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 10 5.5 MIN 480 7 5.0 1.5 1.0 0.1 TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 2 SavantIC Semiconductor .


2009-05-11 : MQ2219    MQ2218A    MQ2219A    BU505    BU505DF    BU506    BU506D    BU506DF    BU508    BU508A   


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