CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BU941ZP3
BVCEO IC VCESAT(MAX)
Spec. No. : C660P3 Issued Dat...
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BU941ZP3
BVCEO IC VCESAT(MAX)
Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2011.01.04 Page No. : 1/5
350V 15A 2V @12A
Features
High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package
Applications
High ruggedness electronic ignitions
Equivalent Circuit
BU941ZP3
B
C
Outline
TO-247
B:Base C:Collector E:Emitter
E
BCE
BU941ZP3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2011.01.04 Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current
Base Current
Power Dissipation Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : *1. Single Pulse tp<5ms
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) IB(DC) IB(Pulse)
Pd(TC=25℃)
RθJC Tj Tstg
Limits
350 350 5 15 30 1 5
155
0.97 175 -65~+175
*1 *1
Unit
V V V
A
A
W °C/W
°C °C
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO
ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) 1 *VBE(sat) 2 *VBE(sat) 3 *VFEC *hFE 1 *hFE 2
Min.
350 350
300 100
Typ.
-
Max.
100 100 20 1.8 1.8 2 2.2 2.5 2.7 2.5 -
Unit Test Conditions
V IC=1mA, IE=0 V IC=100mA, IB=0 μA VCE=300V, IE=0 μA VCB=300V, IE=0 mA VEB=5V, IC=0 V IC=8A, IB=100mA V IC=10A, IB=250mA V IC=12A, IB=300mA V IC=8A, IB=100mA V IC=10A, IB=250mA V IC=12A, IB=300mA V IC=10A ...