BU941ZP3

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZP3 BVCEO IC VCESAT(MAX) Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2011.01.04 Page No. : 1/5 350V 15A 2V @12A Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent Circuit BU941ZP3 B C Outline TO-247 B：Base C：Collector E：Emitter E BCE BU941ZP3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2011.01.04 Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : *1. Single Pulse tp<5ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) IB(DC) IB(Pulse) Pd(TC=25℃) RθJC Tj Tstg Limits 350 350 5 15 30 1 5 155 0.97 175 -65~+175 *1 *1 Unit V V V A A W °C/W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) 1 *VBE(sat) 2 *VBE(sat) 3 *VFEC *hFE 1 *hFE 2 Min. 350 350 300 100 Typ. - Max. 100 100 20 1.8 1.8 2 2.2 2.5 2.7 2.5 - Unit Test Conditions V IC=1mA, IE=0 V IC=100mA, IB=0 μA VCE=300V, IE=0 μA VCB=300V, IE=0 mA VEB=5V, IC=0 V IC=8A, IB=100mA V IC=10A, IB=250mA V IC=12A, IB=300mA V IC=8A, IB=100mA V IC=10A, IB=250mA V IC=12A, IB=300mA V IC=10A ...