Planar Transistor. BU941ZP3 Datasheet

BU941ZP3 Datasheet PDF


Part Number

BU941ZP3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 5 Pages
Datasheet
Download BU941ZP3 Datasheet


BU941ZP3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BU941ZP3
BVCEO
IC
VCESAT(MAX)
Spec. No. : C660P3
Issued Date : 2008.07.22
Revised Date :2011.01.04
Page No. : 1/5
350V
15A
2V @12A
Features
High BVCEO
Low VCE(SAT)
High current capability
Built-in clamping zener
Pb-free lead plating package
Applications
High ruggedness electronic ignitions
Equivalent Circuit
BU941ZP3
B
C
Outline
TO-247
BBase
CCollector
EEmitter
E
BCE
BU941ZP3
CYStek Product Specification

BU941ZP3
CYStech Electronics Corp.
Spec. No. : C660P3
Issued Date : 2008.07.22
Revised Date :2011.01.04
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse tp<5ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
IB(DC)
IB(Pulse)
Pd(TC=25)
RθJC
Tj
Tstg
Limits
350
350
5
15
30
1
5
155
0.97
175
-65~+175
*1
*1
Unit
V
V
V
A
A
W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat) 1
*VBE(sat) 2
*VBE(sat) 3
*VFEC
*hFE 1
*hFE 2
Min.
350
350
-
-
-
-
-
-
-
-
-
-
300
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
100
100
20
1.8
1.8
2
2.2
2.5
2.7
2.5
-
-
Unit Test Conditions
V IC=1mA, IE=0
V IC=100mA, IB=0
μA VCE=300V, IE=0
μA VCB=300V, IE=0
mA VEB=5V, IC=0
V IC=8A, IB=100mA
V IC=10A, IB=250mA
V IC=12A, IB=300mA
V IC=8A, IB=100mA
V IC=10A, IB=250mA
V IC=12A, IB=300mA
V IC=10A
- VCE=10V, IC=5A
- VCE=10V, IC=8A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BU941ZP3
Package
TO-247
(Pb-free lead plating package)
Shipping
30 pcs / tube, 10 tubes/ box ,
10 boxes/carton
Marking
BU941Z
BU941ZP3
CYStek Product Specification





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