BUF7216
Vishay Telefunken
Silicon NPN High Voltage Switching Transistor
Features
D D D D D D D D D
Simple-sWitch-Off Tr...
BUF7216
Vishay Telefunken
Silicon NPN High
Voltage Switching Transistor
Features
D D D D D D D D D
Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse
voltage
14283
Applications
Electronic lamp ballast circuits
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified Parameter Collector-emitter
voltage g Emitter-base
voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCEO VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 800 1600 11 2 3 1 1.5 80 150 –65 to +150 Unit V V V A A A A W °C °C
Tcase ≤ 25°C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.56 Unit K/W
Document Number 86520 Rev. 1, 20–Jan–99
www.vishay.de FaxBack +1-408-970-5600 1 (8)
BUF7216
Vishay Telefunken Electrical Characteristics
Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Test Conditions VCES = 1600 V VCES = 1600 V; Tcase = 125°C VCBO = 1600 V VCBO = 1600 V; Tcase = 125°C Collector-emitter IC = 300 mA; L = 125 mH; breakdown
voltage (figure 1) Imeasure = 100 mA Emitter cut-off current VEB = 11 V Collector-emitter IC = 0.35 A; IB = 85 mA saturation
voltage IC = 1 A; IB = 0.35 A Base-emitter saturation
voltage ...