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BUH715AF

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH715AF www.datasheet4u.com DESCRIPTION...


SavantIC

BUH715AF

File Download Download BUH715AF Datasheet


Description
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH715AF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage,high speed APPLICATIONS ·Horizontal deflection for monitors. ·Switching mode power supplies PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 10 20 5 10 57 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=7A ;IB=1.5A IC=7A ;IB=1.5A VCE=1500V; VBE=0 Tj=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V 10 8 MIN 700 10 www.datasheet4u.com BUH715AF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.5 1.3 1 2 100 V V ...




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