BUJ100AT

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.23 14 50 MAX. 700 700 400 1.0 2.0 6 1.0 20 70 UNIT V V V A A W V ns Tsp ≤ 25 ˚C IC = 0.75 A;IB = 150 mA IC = 0.75 A;VCE = 5 V IC = 1.0 A,IBON=200 mA PINNING - SOT223 PIN 1 2 3 4 base collector emitter collector (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 1.0 2.0 0.5 1.0 6 150 150 UNIT V V V A A A ...