BUJ302A

TO-220AB BUJ302A NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Low thermal resistance 1.3 Applications „ DC-to-DC converters „ High-frequency electronic lighting ballast applications „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. Symbol IC Quick reference data Parameter collector current Ptot VCESM total power dissipation collector-emitter peak voltage Static characteristics hFE DC current gain Conditions see Figure 1; see Figure 2; see Figure 4 Tmb ≤ 25 °C; see Figure 3 VBE = 0 V Min Typ Max Unit - - 4A - - 80 W - - 1050 V IC = 0.1 A; VCE = 5 V; [1] 48 66 100 Tmb = 25 °C; see Figure 11 IC = 0.8 A; VCE = 3 V; [1] 25 42 50 Tmb = 25 °C; see Figure 12 [1] Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description B base C collector E emitter C mounting base; connected to collector Simplified outline mb BUJ302A NPN power transistor Graphic symbol C B E sym123 3. Ordering information 123 SOT78 (TO-220AB) Table 3. Ordering information Type number Package Name BUJ302A TO-220AB 4. Limiting values Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220...