BUJ302AD

DPAK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (DPAK) surface mounted package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Low thermal resistance „ Surface-mountable package 1.3 Applications „ DC-to-DC converters „ High-frequency electronic lighting ballast applications „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. Symbol IC Quick reference data Parameter collector current Ptot VCESM total power dissipation collector-emitter peak voltage Static characteristics hFE DC current gain Conditions see Figure 1; see Figure 2; see Figure 4 Tmb ≤ 25 °C; see Figure 3 VBE = 0 V Min Typ Max Unit - - 4A - - 80 W - - 1050 V IC = 0.1 A; VCE = 5 V; [1] 48 66 100 Tmb = 25 °C; see Figure 11 IC = 0.8 A; VCE = 3 V; [1] 25 42 50 Tmb = 25 °C; see Figure 12 [1] Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % NXP Semiconductors BUJ302AD NPN power transistor 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description Simplified outline B base C collector[1] mb E emitter C mounting base; connected to collector 2 13 SOT428 (DPAK) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 3. Ordering information Graphic symbol C B E sym123 Table 3. Ordering information Type number Package Name BUJ302...