isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for rob...
isc Silicon NPN Power Transistor
DESCRIPTION ·High
Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency electronic lighting ballast
applications, converters, inverters, switching regulators, motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1000
V
VCEO
Collector-Emitter
Voltage
500
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
4
A
120
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.04 K/W
BUJ303A
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC=50mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation
Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB= 0.6A
VCB=1000V ;VBE= 0 VCB=1000V ;VBE= 0;TC=125℃
VEB= 9V; IC= 0
ICEO
Base Cutoff Current
VCE= 500V; IC= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
hFE-2
DC Current Ga...
