power transistor. BUJ303AD Datasheet

BUJ303AD Datasheet PDF


Part Number

BUJ303AD

Description

NPN power transistor

Manufacture

NXP

Total Page 14 Pages
Datasheet
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BUJ303AD
BUJ303AD
NPN power transistor
Rev. 1 — 2 September 2011
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
Fast switching
Low thermal resistance
Surface mountable package
Very high voltage capability
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
High frequency electronic lighting
ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
IC
Quick reference data
Parameter
collector current
Ptot
VCESM
total power dissipation
collector-emitter peak
voltage
Static characteristics
hFE DC current gain
Conditions
see Figure 1; see Figure 2;
see Figure 4
Tmb 25 °C; see Figure 3
VBE = 0 V
IC = 5 mA; VCE = 5 V;
Tmb = 25 °C; see Figure 11
IC = 500 mA; VCE = 5 V;
Tmb = 25 °C; see Figure 11
Min Typ Max Unit
- - 5A
- - 80 W
- - 1000 V
10 22 30
14 25 35

BUJ303AD
NXP Semiconductors
BUJ303AD
NPN power transistor
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B base
C collector[1]
E emitter
C mounting base;
connected to collector
Simplified outline
mb
2
13
SOT428 (DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3. Ordering information
Graphic symbol
C
B
E
sym123
Table 3. Ordering information
Type number
Package
Name
BUJ303AD
DPAK
4. Limiting values
Description
plastic single-ended surface-mounted package (DPAK);
3 leads (one lead cropped)
Version
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
VBE = 0 V
IB = 0 A
see Figure 1; see Figure 2; see Figure 4
Tmb 25 °C; see Figure 3
Min Max Unit
- 1000 V
- 500 V
- 5A
- 10 A
- 2A
- 4A
- 80 W
-65 150 °C
- 150 °C
BUJ303AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2011
© NXP B.V. 2011. All rights reserved.
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