BUJ303B

DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V Tmb ≤ 25 ˚C IC = 3 A; IB = 1 A IC = 3 A; VCE = 1.5 V IC=2.5 A,IB1=0.5 A TYP. 0.25 10.5 300 MAX. 1050 1050 400 5 10 100 1.5 - UNIT V V V A A W V ns PINNING - TO220AB PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector PIN CONFIGURATION tab 1 23 SYMBOL c b e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation S...