DatasheetsPDF.com

BUJ403AX Datasheet

Part Number BUJ403AX
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BUJ403AX DatasheetBUJ403AX Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-B.

  BUJ403AX   BUJ403AX






Part Number BUJ403A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BUJ403AX DatasheetBUJ403A Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage,high speed APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications, converters,inverters,switching regulators, motor control systems,etc PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUJ403A Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER C.

  BUJ403AX   BUJ403AX







Part Number BUJ403A
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BUJ403AX DatasheetBUJ403A Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCES.

  BUJ403AX   BUJ403AX







Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 0.15 15.5 170 MAX. 1200 1200 550 6 10 32 1.0 300 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 2 A; IB = 0.4 A IC = 3 A; VCE = 5 V IC = 2.5 A; IB1 = 0.5 A PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1200 550 1200 6 10 3 5 32 150 150 .


2005-04-17 : 2SK1792    7611    7611D2    74LS192    7425    LA7830    IDT74FCT827B    IDT74FCT827BT    IDT74FCT827C    IDT74FCT827CT   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)