BUJD105AD
NPN power transistor with integrated diode
Rev. 01 — 8 May 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.
1.2 Features and benefits
Fast switching High voltage capability Very low switching and conduction losses
1.3 Applications
DC-to-DC converters Electronic lightin.
NPN power transistor
BUJD105AD
NPN power transistor with integrated diode
Rev. 01 — 8 May 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.
1.2 Features and benefits
Fast switching High voltage capability Very low switching and conduction losses
1.3 Applications
DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems
1.4 Quick reference data
Table 1. IC Ptot VCESM Quick reference Conditions Tmb ≤ 25 °C; see Figure 3 VBE = 0 V Min Typ Max 8 80 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter
Static characteristics hFE VCE = 5 V; IC = 4 A; Tmb = 25 °C; see Figure 6; see Figure 7 8 13.5 -
NXP Semiconductors
BUJD105AD
NPN power transistor with integrated diode
www.DataSheet4U.com
2. Pinning information
Table 2. Pin 1 2 3 mb B C E C Pinning information Symbol Description base collector emitter mounting base; connected to collector
2 1 3
Simplified outline [1]
mb
Graphic symbol
C
B
E
sym131
SOT428 (SC-63; DPAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3. Ordering information
Table 3. Ordering information Package Name BUJD105AD SC-63; DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Versio.