BUJD203A

BUJD203A NPN power transistor with integrated diode 9 October 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT78 (TO220AB) plastic package. 2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Very low switching and conduction losses 3. Applications DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol C B E sym131 123 TO-220AB (SOT78) WeEn Semiconductors BUJD203A NPN power transistor with integrated diode 5. Ordering information Table 2. Ordering information Type number Package Name BUJD203A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. 9 October 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 WeEn Semiconductors BUJD203A NPN power transistor with integrated diode 6. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCESM collector-emitter peak voltage VBE = 0 V VC...