BUK107-50DS

Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK107-50DS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance MAX. 50 0.7 1.8 150 175 UNIT V A W ˚C mΩ APPLICATIONS General controller for driving lamps small motors solenoids FEATURES Vertical power DMOS output stage Overload protected up to 85˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input Input clamping suitable for pull-up resistor drive circuit Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on all pins Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP INPUT RIG POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT223 PIN 1 2 3 4 input drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL D TOPFET I P 1 2 3 S March 1997 1 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ID II...