BUK436-100B

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-100A/B DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage Drain BUK436-100A ID Current-continuou s@ TC=25℃ BUK436-100B Ptot Total Dissipation@TC=25℃ ±30 V 33 A 31 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 45 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK436-100A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.0 RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=20A BUK436-100A BUK436-100B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 4.0 V 0.057 Ω 0.065 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=100V; VGS= 0 20 uA NOTICE： ISC ...