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BUK436-200A Datasheet

Part Number BUK436-200A
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet BUK436-200A DatasheetBUK436-200A Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-200A/B DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS G.

  BUK436-200A   BUK436-200A






Part Number BUK436-200B
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet BUK436-200A DatasheetBUK436-200B Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-200A/B DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS G.

  BUK436-200A   BUK436-200A







N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-200A/B DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage Drain BUK436-200A ID Current-continuou s@ TC=25℃ BUK436-200B Ptot Total Dissipation@TC=25℃ ±30 V 19 A 17 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 45 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK436-200A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 200 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.0 RDS(on) Drain-Source On-stage Resistance VGS=10V; BUK436-200A BUK436-200B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 4.0 V 0.16 Ω 0.2 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 20 uA NOTICE: ISC reserves the.


2020-09-30 : 2SJ527    BUK444-600A    BUK438-500B    BUK438-500A    BUK436-800B    BUK436-800A    2SD2141    2SD2062    2SD2066    2SD2051   


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