BUK436W-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 19 125 0.16 MAX. -200B 200 17 125 0.2 UNIT V A W Ω PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION SYMBOL d g 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -200A 19 12 76 125 150 150 MAX. 200 200 30 -200B 17 11 68 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 1.0 UNIT K/W K/W July 1997 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/...