BUK444-220A

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification BUK444-200A DESCRIPTION ·5.3A, 200V SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics Majority Carrier Device Related Literature APPLICATIONS ·use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=37℃ Total Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range 200 ±30 5.3 25 150 150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 5 ℃/W 55 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification BUK444-200A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 VSD Diode Forward Voltage IF= 5.3A; VGS= 0 MIN MAX UNIT 200 V 2.1 4 V 0.4 Ω ±100 nA...