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BUK444-60H Datasheet

Part Number BUK444-60H
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK444-60H DatasheetBUK444-60H Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power d.

  BUK444-60H   BUK444-60H






Part Number BUK444-600B
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet BUK444-60H DatasheetBUK444-600B Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK444-600A/B DESCRIPTION ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK444-.

  BUK444-60H   BUK444-60H







Part Number BUK444-600A
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet BUK444-60H DatasheetBUK444-600A Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK444-600A/B DESCRIPTION ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK444-.

  BUK444-60H   BUK444-60H







PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 21 30 150 38 UNIT V A W ˚C mΩ PINNING - SOT186 PIN 1 2 3 gate drain DESCRIPTION PIN CONFIGURATION case SYMBOL d g source 1 2 3 case isolated s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 60 60 30 21 13 84 30 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound TYP. 55 MAX. 4.17 UNIT K/W K/W March 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BU.


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