isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
BUK445-400A/B
DESCRIPTION ·Drain Source Voltage-
: VDSS=400V(Mi...
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
BUK445-400A/B
DESCRIPTION ·Drain Source
Voltage-
: VDSS=400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source
Voltage (VGS=0)
VGS
Gate-Source
Voltage
Drain
BUK445-400A
ID
Current-continuous
@ TC=25℃
BUK445-400B
VALUE UNIT
400
V
±30
V
4
A 3.8
Ptot
Total Dissipation@TC=25℃
30
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
150
℃
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isc N-Channel
Mosfet Transistor
INCHANGE Semiconductor
BUK445-400A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 1mA
400
V
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID=1mA
2.0
RDS(on)
Drain-Source On-stage Resistance
VGS=10V; ID=1A
BUK445-400A BUK445-400B
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
4.0
V
0.08
Ω
1
Ω
±100 nA
IDSS
Zero Gate
Voltage Drain Current
VDS=400V; VGS= 0
20
uA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications ...
