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BUK445-60A Datasheet

Part Number BUK445-60A
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet BUK445-60A DatasheetBUK445-60A Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK445-60A ID Current-continuous @ TC=25℃ .

  BUK445-60A   BUK445-60A






Part Number BUK445-60A
Manufacturers Philips
Logo Philips
Description Power MOS Transistor
Datasheet BUK445-60A DatasheetBUK445-60A Datasheet (PDF)

Philips Semiconductors PowerMOS transistor Product Specification BUK445-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) BUK445 Drain-source voltage Drain current (DC) Total power d.

  BUK445-60A   BUK445-60A







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK445-60A ID Current-continuous @ TC=25℃ BUK445-60B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V ±30 V 21 A 20 30 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W BUK445-60A/B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK445-60A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(th) RDS(on) Gate Threshold Voltage VDS=VGS; ID=1mA Drain-Source On-stage Resistance VGS=10V; ID=20A BUK445-60A BUK445-60B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=21A; VGS=0 Gfs Forward Transconductance VDS= 25V;ID= 20A tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A;RGS.


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