BUK445-60B

Philips Semiconductors PowerMOS transistor Product Specification BUK445-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) BUK445 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 21 30 150 0.038 MAX. -60B 60 20 30 150 0.045 UNIT V A W ˚C Ω PINNING - SOT186 PIN DESCRIPTION 1 gate 2 drain 3 source case isolated PIN CONFIGURATION case 12 3 SYMBOL d g s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. VDS VDGR ±VGS Drain-source voltage Drain-gate voltage Gate-source voltage - - RGS = 20 kΩ - - - ID Drain current (DC) Ths = 25 ˚C - ID Drain current (DC) Ths = 100 ˚C - IDM Drain current (pulse peak value) Ths = 25 ˚C - Ptot Total power dissipation Tstg Storage temperature Tj Junction Temperature Ths = 25 ˚C - - - 55 - - THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MAX. 60 60 30 -60A 21 13 84 -60B 20 12.6 80 30 150 150 UNIT V V V A A A W ˚C ˚C...