BUK452-100A

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK452-100A ID Current-continuou s@ TC=25℃ BUK452-100B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 100 V ±30 V 11 A 10 60 W 175 ℃ 175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W BUK452-100A/B isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK452-100A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.1 RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5.5A BUK452-100A BUK452-100B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 4.0 V 0.25 Ω 0.3 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=100V; VGS= 0 10 uA VSD Diode Forward Voltage IF=11A; VGS=0 1.5 V Gfs Forward...