BUK453-60B

Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK453 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 22 75 175 0.08 MAX. -60B 60 20 75 175 0.10 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -60A 22 15 88 75 175 175 MAX. 60 60 30 -60B 20 14 80 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2 UNIT K/W K/W April 1993 1 Rev 1.100 Philips Semiconductors Product Specification Pow...