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BUK456-100B Datasheet

Part Number BUK456-100B
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK456-100B DatasheetBUK456-100B Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Junction tempe.

  BUK456-100B   BUK456-100B






Part Number BUK456-100B
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet BUK456-100B DatasheetBUK456-100B Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK456-100A ID Current-continu.

  BUK456-100B   BUK456-100B







PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 34 150 175 0.057 MAX. -100B 100 32 150 175 0.065 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -100A 34 24 136 150 175 175 MAX. 100 100 30 -100B 32 22 128 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1.0 UNIT K/W K/W April 1998 1 Rev 1.100 Philips Semiconductors Product specification .


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