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BUK463-60A Datasheet

Part Number BUK463-60A
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK463-60A DatasheetBUK463-60A Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK463 Drain-source voltage Drain current (DC) Total power dissipation .

  BUK463-60A   BUK463-60A






Part Number BUK463-60B
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK463-60A DatasheetBUK463-60B Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK463 Drain-source voltage Drain current (DC) Total power dissipation .

  BUK463-60A   BUK463-60A







PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK463 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 22 75 175 0.08 MAX. -60B 60 20 75 175 0.10 UNIT V A W ˚C Ω PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -60A 22 15 88 75 175 175 MAX. 60 60 30 -60B 20 14 80 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 2.0 UNIT K/W K/W July 1995 1 Rev 1.000 Philips Semic.


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