Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK453-100A/B
GENERAL DESCRIPTION...
Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK453-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
BUK473-100A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK473 Drain-source
voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -100A 100 9 25 0.16 MAX. -100B 100 8 25 0.2 UNIT V A W Ω
PINNING - SOT186A
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source
voltage Drain-gate
voltage Gate-source
voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 -100A 9 5.7 36 25 150 150 MAX. 100 100 30 -100B 8 5 32 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 5 UNIT K/W K/W
November 1996
1
Rev 1.200
Philips Semiconductors
Pr...