Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
GENERAL DESCRIPTION
N-channel enhancemen...
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source
voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 21 30 150 38 UNIT V A W ˚C mΩ
PINNING - SOT186A
PIN 1 2 3 gate drain DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
source
1 2 3
case isolated
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source
voltage Drain-gate
voltage Gate-source
voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 60 60 30 21 13 84 30 150 150 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound TYP. 55 MAX. 4.17 UNIT K/W K/W
February 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor...