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BUK555-100B Datasheet

Part Number BUK555-100B
Manufacturers NXP
Logo NXP
Description PowerMOS transistor Logic level FET
Datasheet BUK555-100B DatasheetBUK555-100B Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK555-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (.

  BUK555-100B   BUK555-100B






Part Number BUK555-100B
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet BUK555-100B DatasheetBUK555-100B Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK555-100A/B DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Vol.

  BUK555-100B   BUK555-100B







PowerMOS transistor Logic level FET

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK555-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 25 125 175 0.085 MAX. -100B 100 22 125 175 0.11 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -100A 25 18 100 125 175 175 MAX. 100 100 15 20 -100B 22 15 88 UNIT V V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS M.


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