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BUK6211-75C Datasheet

Part Number BUK6211-75C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS FET
Datasheet BUK6211-75C DatasheetBUK6211-75C Datasheet (PDF)

BUK6211-75C N-channel TrenchMOS FET Rev. 02 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate .

  BUK6211-75C   BUK6211-75C






N-channel TrenchMOS FET

BUK6211-75C N-channel TrenchMOS FET Rev. 02 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Engine management „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Min Typ 9.3 Max Unit 75 74 158 11 V A W mΩ total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 Static characteristics NXP Semiconductors BUK6211-75C N-channel TrenchMOS FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 74 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped ID = 25 A; VDS = .


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