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BUK6507-75C Datasheet

Part Number BUK6507-75C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK6507-75C DatasheetBUK6507-75C Datasheet (PDF)

BUK6507-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sou.

  BUK6507-75C   BUK6507-75C






N-Channel MOSFET

BUK6507-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 [1] Min Typ Max Unit 75 V 100 A 204 W Static characteristics RDSon drain-source on-state resistance 6.5 7.6 mΩ NXP Semiconductors BUK6507-75C N-channel TrenchMOS FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 191 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive drain-source ID = 100 A; Vsup ≤ 75 V; avalanche energy RGS = 50 Ω; VGS = 10 V; Tj(i.


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