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BUK652R1-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 5 July 2010 Objective data sheet
...
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BUK652R1-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 5 July 2010 Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems HVAC Motors, lamps and solenoid control Start-Stop micro-hybrid applications Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation drain-source on-state resistance non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C Tmb = 25 °C; see Figure 1 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 3 ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[1]
Min -
Typ 1.8
Max Unit 30 100 262 2.1 V A W mΩ
Static characteristics
Avalanche ruggedness EDS(AL)S 1.7 J
[1]
Continuous current is limited by package.
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NXP Semiconductors
BUK652R1-30C
N-channel TrenchMOS intermediate level FET
2. Pinning informa...