BUK6D210-60E
60 V, N-channel Trench MOSFET
17 April 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • Trench MOSFET technology • AEC-Q101 qu.
N-channel MOSFET
BUK6D210-60E
60 V, N-channel Trench MOSFET
17 April 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • Trench MOSFET technology • AEC-Q101 qualified
3. Applications
• LED lighting • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tsp = 25 °C Tsp = 25 °C
VGS = 10 V; ID = 2.1 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20 -
20 V
- - 5.7 A
- - 15 W
- 160 210 mΩ
Nexperia
BUK6D210-60E
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
Graphic symbol
16 7
25
384
Transparent top view
DFN2020MD‑6 (SOT1220)
G
D
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BUK6D210-60E
DFN2020MD‑6 plastic, leadless thermal enhanced ul.