BUK6D43-40P

BUK6D43-40P 40 V, P-channel Trench MOSFET 20 December 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 ℃ Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -10 V; Tsp = 25 °C Ptot total power dissipation Tsp = 25 °C Static characteristics RDSon drain-source on-state VGS = -10 V; ID = -6 A; Tj = 25 °C resistance Min Typ Max Unit - - -40 V -20 - 20 V - - -14 A - - 15 W - 30 43 mΩ Nexperia BUK6D43-40P 40 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 D G 384 Transparent top view DFN2020MD-6 (SOT1220) S 017aaa094 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6D43-40P DFN2020MD-6 DFN2020MD-6: plastic ...