BUK6D81-80E

BUK6D81-80E 80 V, N-channel Trench MOSFET 4 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tsp = 25 °C Tsp = 25 °C VGS = 10 V; ID = 3.2 A; Tj = 25 °C Min Typ Max Unit - - 80 V -20 - 20 V - - 9.8 A - - 18.8 W - 62 81 mΩ Nexperia BUK6D81-80E 80 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 384 Transparent top view DFN2020MD‑6 (SOT1220) G D S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description BUK6D81-80E DFN2020MD‑6 plastic, leadless thermal enhanced ultra ...