BUK6D81-80E
80 V, N-channel Trench MOSFET
4 April 2019
Product data sheet
1. General description
N-channel enhancement...
BUK6D81-80E
80 V, N-channel Trench
MOSFET
4 April 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) Trench
MOSFET technology AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source
voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tsp = 25 °C Tsp = 25 °C
VGS = 10 V; ID = 3.2 A; Tj = 25 °C
Min Typ Max Unit
- - 80 V
-20 -
20 V
- - 9.8 A
- - 18.8 W
- 62 81 mΩ
Nexperia
BUK6D81-80E
80 V, N-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
Graphic symbol
16 7
25
384
Transparent top view
DFN2020MD‑6 (SOT1220)
G
D
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BUK6D81-80E
DFN2020MD‑6 plastic, leadless thermal enhanced ultra ...