BUK7214-75B
TrenchMOS™ standard level FET
M3D300
Rev. 01 — 26 January 2004
Product data
1. Product profile
1.1 Description
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N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 185 °C rated s Q101 compliant s Standard level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s .
Standard Level Fet
BUK7214-75B
TrenchMOS™ standard level FET
M3D300
Rev. 01 — 26 January 2004
Product data
1. Product profile
1.1 Description
www.DataSheet4U.com
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 185 °C rated s Q101 compliant s Standard level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 133 mJ s ID ≤ 70 A s RDSon = 12.6 mΩ (typ) s Ptot ≤ 167 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline
[1]
Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol
d
mb
g s
MBB076
2 1 Top view 3
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Philips Semiconductors
BUK7214-75B
TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information Package Name BUK7214-75B D-PAK Description Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped). Version SOT428 Type number
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4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source volt.