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BUK7520-55 Datasheet

Part Number BUK7520-55
Manufacturers NXP
Logo NXP
Description TrenchMOS transistor Standard level FET
Datasheet BUK7520-55 DatasheetBUK7520-55 Datasheet (PDF)

BUK7520-55A N-channel TrenchMOS standard level FET Rev. 02 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for sta.

  BUK7520-55   BUK7520-55






Part Number BUK7520-55
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS standard level FET
Datasheet BUK7520-55 DatasheetBUK7520-55 Datasheet (PDF)

BUK7520-55A N-channel TrenchMOS standard level FET Rev. 02 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for sta.

  BUK7520-55   BUK7520-55







TrenchMOS transistor Standard level FET

BUK7520-55A N-channel TrenchMOS standard level FET Rev. 02 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 48 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 55 V - - 54 A - - 118 W - - 40 mΩ - 17 20 mΩ - - 115 mJ NXP Semiconductors BUK7520-55A N-channel TrenchMOS standard level FET 2. Pinn.


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