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BUK755R4-100E Datasheet

Part Number BUK755R4-100E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK755R4-100E DatasheetBUK755R4-100E Datasheet (PDF)

BUK755R4-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard leve.

  BUK755R4-100E   BUK755R4-100E






Part Number BUK755R4-100E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK755R4-100E DatasheetBUK755R4-100E Datasheet (PDF)

BUK755R4-100E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard leve.

  BUK755R4-100E   BUK755R4-100E







N-channel MOSFET

BUK755R4-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12V, 24V and 48V Automotive systems • Electric and electro-hydraulic power steering • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 100 V [1] - - 120 A - - 349 W - 4.1 5.2 mΩ - 65 - nC Nexperia BUK755R4-100E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning informa.


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