D2 PA K
BUK7607-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011 Product data sheet
1. Product profile...
D2 PA K
BUK7607-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3
[1]
Min -
Typ 5.8
Max 55 75 203 7.1
Unit V A W mΩ
total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy gate-drain charge 351 mJ
Dynamic characteristics QGD 17 nC
[1]
Continuous current is limited by package.
NXP Semic...