N-Channel MOSFET
BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007 Product data sheet
1. Product profile
1.1 ...
Description
BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
175 °C rated Standard level compatible Q101 compliant TrenchMOS technology
1.3 Applications
12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1. ID Ptot RDSon Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13
[1][2]
Symbol Parameter drain current total power dissipation drain-source on-state resistance
Min -
Typ 1.5
Max 100 333 1.8
Unit A W mΩ
Static characteristics
Avalanche ruggedness ID = 100 A; Vsup ≤ 30 V; EDS(AL)S non-repetitive drain-source avalanche RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C energy
[1] [2] Refer to document 9397 750 12572 for further information. Continuous current is limited by package.
-
-
1.7
J
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain
1
G
mbb076
Simplified outline
mb
Graphic Symbol
D
S
2 3
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK761R8...
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