D2 PA K
BUK7628-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
1. Product profi...
D2 PA K
BUK7628-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance
1.3 Applications
Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation drain-source on-state resistance non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; Tj = 25 °C ID = 30 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ 20 Max Unit 100 47 166 28 V A W mΩ
Static characteristics
Avalanche ruggedness EDS(AL)S 45 mJ
NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK7628-100A D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 lea...