BUK762R0-40C

BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Low on-state resistance „ Standard level compatible 1.3 Applications „ 12 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps, solenoids 1.4 Quick reference data Table 1. ID Ptot RDSon Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 and 12 [1][2] Symbol Parameter drain current total power dissipation drain-source on-state resistance Min - Typ 1.7 Max 100 333 2 Unit A W mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive ID = 100 A; Vsup ≤ 40 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; inductive load type unclamped inductive load [1] [2] Continuous current is limited by package. Refer to document 9397 750 12572 for further information. - - 1.2 J NXP Semiconductors BUK762R0-40C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting...